2009-06-17T09:09:54Z
2009-06-17T09:09:54Z
2000
A new technology for the three-dimensional (3-D) stacking of very thin chips on a substrate is currently under development within the ultrathin chip stacking (UTCS) Esprit Project 24910. In this work, we present the first-level UTCS structure and the analysis of the thermomechanical stresses produced by the manufacturing process. Chips are thinned up to 10 or 15 m. We discuss potentially critical points at the edges of the chips, the suppression of delamination problems of the peripheral dielectric matrix and produce a comparative study of several technological choices for the design of metallic interconnect structures. The purpose of these calculations is to give inputs for the definition of design rules for this technology. We have therefore undertaken a programme that analyzes the influence of sundry design parameters and alternative development options. Numerical analyses are based on the finite element method.
Artículo
Versión publicada
Inglés
Delamination; Finite element analysis; Integrated circuit design; Integrated circuit interconnections; Integrated circuit packaging; Thermal stresses; Circuits integrals
IEEE
Reproducció del document publicat a http://dx.doi.org/10.1109/6144.888852
IEEE Transactions on Components Packaging and Manufacturing Technology Part A, 2000, vol. 23, núm. 4, p. 673-679.
http://dx.doi.org/10.1109/6144.888852
(c) IEEE, 2000