Optical response of Cu3Ge thin films

Fecha de publicación

2012-05-03T09:30:29Z

2012-05-03T09:30:29Z

1996-05-15

Resumen

We report an investigation on the optical properties of Cu3Ge thin films displaying very high conductivity, with thickness ranging from 200 to 2000 Å, deposited on Ge substrates. Reflectance, transmittance, and ellipsometric spectroscopy measurements were performed at room temperature in the 0.01-6.0, 0.01-0.6, and 1.4-5.0 eV energy range, respectively. The complex dielectric function, the optical conductivity, the energy-loss function, and the effective charge density were obtained over the whole spectral range. The low-energy free-carrier response was well fitted by using the classical Drude-Lorentz dielectric function. A simple two-band model allowed the resulting optical parameters to be interpreted coherently with those previously obtained from transport measurements, hence yielding the densities and the effective masses of electrons and holes.

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Artículo


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Inglés

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American Institute of Physics

Documentos relacionados

Reproducció del document publicat a: http://dx.doi.org/10.1063/1.362370

Journal of Applied Physics, 1984, vol. 56, núm. 11, p. 3353-3356

http://dx.doi.org/10.1063/1.362370

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Derechos

(c) American Institute of Physics, 1984

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