Latest Depleted CMOS Sensor Developments in the CERN RD50 Collaboration

Abstract

This contribution summarizes the most recent activities carried out within the CERN RD50 collaboration with regard to Depleted Monolithic Active Pixel Sensors (DMAPS). In particular, these activities have been focused on the characterization of the RD50-MPW2 prototype. RD50-MPW2 is the second DMAPS prototype developed in the 150 nm HV-CMOS technology process from LFoundry. The main characteristics of the RD50-MPW2 design will be reviewed. The leakage current, breakdown voltage and Edge Transient Current Technique (E-TCT) measurements of the RD50-MPW2 test structures will be presented. The characterization of the RD50-MPW2 active matrix and its readout electronics will be also described. Finally, the initial characteristics of the new RD50-MPW3 DMAP sensor prototype being designed at present by the CERN-RD50 collaboration will be shown.