Atomic and Electronic Structures of Co-Doped In2O3 from Experiment and Theory

Publication date

2025-07-21T11:32:30Z

2025-07-21T11:32:30Z

2024-05-29

2025-07-21T11:32:31Z

Abstract

The synthesis and properties of stoichiometric, reduced, and Co-doped In2O3 are described in the light of several experimental techniques, including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), ultraviolet (UV)–visible spectroscopy, porosimetry, and density functional theory (DFT) methods on appropriate models. DFT-based calculations provide an accurate prediction of the atomic and electronic structure of these systems. The computed lattice parameter is linearly correlated with the experimental result in the Co concentration ranging from 1.0 to 5.0%. For higher Co concentrations, the theoretical-experimental analysis of the results indicates that the dopant is likely to be preferentially present at surface sites. The analysis of the electronic structure supports the experimental assignment of Co2+ for the doped material. Experiments and theory find that the presence of Co has a limited effect on the material band gap.

Document Type

Article


Published version

Language

English

Publisher

American Chemical Society

Related items

Reproducció del document publicat a: https://doi.org/https://doi.org/10.1021/acsami.4c05727

ACS Applied Materials & Interfaces, 2024, vol. 16, num.23, p. 30157-30165

https://doi.org/https://doi.org/10.1021/acsami.4c05727

Recommended citation

This citation was generated automatically.

Rights

cc-by (c) Voccia, Maria et al., 2024

http://creativecommons.org/licenses/by/3.0/es/