2020-05-16T18:06:33Z
2020-05-16T18:06:33Z
2017-10-18
2020-05-16T18:06:34Z
In this work, the fabrication and the structural, optical and electrical properties of Al-Tb/SiO2 nanomultilayers have been studied. The nanomultilayers were deposited by means of electron beam evaporation on top of p-type Si substrates. Optical characterization shows a narrow and strong emission in the green spectral range, indicating the optical activation of Tb3+ ions. The electrical characteriza-tion revealed conduction limited by the electrode, although trapped-assisted mechanisms can also contribute to transport. The electroluminescence analysis revealed also emission from Tb3+ ions, yielded promising results to in-clude this material in future optoelectronics applications as integrated emitting devices.
Article
Accepted version
English
Metall-òxid-semiconductors; Luminescència; Optoelectrònica; Metal oxide semiconductors; Luminescence; Optoelectronics
Wiley-VCH
Versió postprint del document publicat a: https://doi.org/10.1002/pssa.201700451
physica status solidi (a), 2017, vol. 215, num. 1700451
https://doi.org/10.1002/pssa.201700451
(c) Wiley-VCH, 2017