Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters

dc.contributor.author
Jambois, Olivier
dc.contributor.author
Gourbilleau, Fabrice
dc.contributor.author
Kenyon, Anthony J.
dc.contributor.author
Montserrat i Martí, Josep
dc.contributor.author
Rizk, Richard
dc.contributor.author
Garrido Fernández, Blas
dc.date.issued
2011-01-25T13:17:56Z
dc.date.issued
2011-01-25T13:17:56Z
dc.date.issued
2010-01-20
dc.identifier
1094-4087
dc.identifier
https://hdl.handle.net/2445/15726
dc.identifier
585172
dc.description.abstract
This study reports the estimation of the inverted Er fraction in a system of Er doped silicon oxide sensitized by Si nanoclusters, made by magnetron sputtering. Electroluminescence was obtained from the sensitized erbium, with a power efficiency of 10¿2 %. By estimating the density of Er ions that are in the first excited state, we find that up to 20% of the total Er concentration is inverted in the best device, which is one order of magnitude higher than that achieved by optical pumping of similar materials.
dc.format
6 p.
dc.format
application/pdf
dc.language
eng
dc.publisher
Optical Society of America
dc.relation
Reproducció del document publicat a: http://dx.doi.org/10.1364/OE.18.002230
dc.relation
Optics Express, 2010, vol. 18, núm 3, pp. 2230-2235
dc.relation
http://dx.doi.org/10.1364/OE.18.002230
dc.relation
info:eu-repo/grantAgreement/EC/FP6/033574/EU//LANCER
dc.rights
(c) Optical Society of America, 2010
dc.rights
info:eu-repo/semantics/openAccess
dc.source
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
dc.subject
Terres rares
dc.subject
Semiconductors
dc.subject
Propietats òptiques
dc.subject
Amplificadors (Electrònica)
dc.subject
Semiconductors
dc.subject
Optical properties
dc.subject
Amplifiers (Electronics)
dc.title
Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters
dc.type
info:eu-repo/semantics/article
dc.type
info:eu-repo/semantics/publishedVersion


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