2011-01-25T13:17:56Z
2011-01-25T13:17:56Z
2010-01-20
This study reports the estimation of the inverted Er fraction in a system of Er doped silicon oxide sensitized by Si nanoclusters, made by magnetron sputtering. Electroluminescence was obtained from the sensitized erbium, with a power efficiency of 10¿2 %. By estimating the density of Er ions that are in the first excited state, we find that up to 20% of the total Er concentration is inverted in the best device, which is one order of magnitude higher than that achieved by optical pumping of similar materials.
Article
Published version
English
Terres rares; Semiconductors; Propietats òptiques; Amplificadors (Electrònica); Semiconductors; Optical properties; Amplifiers (Electronics)
Optical Society of America
Reproducció del document publicat a: http://dx.doi.org/10.1364/OE.18.002230
Optics Express, 2010, vol. 18, núm 3, pp. 2230-2235
http://dx.doi.org/10.1364/OE.18.002230
info:eu-repo/grantAgreement/EC/FP6/033574/EU//LANCER
(c) Optical Society of America, 2010