Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples

dc.contributor.author
Pitanti, Alessandro
dc.contributor.author
Navarro Urrios, Daniel
dc.contributor.author
Prtljaga, Nikola
dc.contributor.author
Daldosso, Nicola
dc.contributor.author
Gourbilleau, Fabrice
dc.contributor.author
Rizk, Richard
dc.contributor.author
Garrido Fernández, Blas
dc.contributor.author
Pavesi, Lorenzo
dc.date.issued
2011-01-25T12:51:43Z
dc.date.issued
2011-01-25T12:51:43Z
dc.date.issued
2010-09-13
dc.date.issued
2011-01-14T13:50:56Z
dc.identifier
1089-7550
dc.identifier
https://hdl.handle.net/2445/15724
dc.identifier
585169
dc.description.abstract
We report a spectroscopic study about the energy transfer mechanism among silicon nanoparticles (Si-np), both amorphous and crystalline, and Er ions in a silicon dioxide matrix. From infrared spectroscopic analysis, we have determined that the physics of the transfer mechanism does not depend on the Si-np nature, finding a fast (< 200 ns) energy transfer in both cases, while the amorphous nanoclusters reveal a larger transfer efficiency than the nanocrystals. Moreover, the detailed spectroscopic results in the visible range here reported are essential to understand the physics behind the sensitization effect, whose knowledge assumes a crucial role to enhance the transfer rate and possibly employing the material in optical amplifier devices. Joining the experimental data, performed with pulsed and continuous-wave excitation, we develop a model in which the internal intraband recombination within Si-np is competitive with the transfer process via an Auger electron"recycling" effect. Posing a different light on some detrimental mechanism such as Auger processes, our findings clearly recast the role of Si-np in the sensitization scheme, where they are able to excite very efficiently ions in close proximity to their surface. (C) 2010 American Institute of Physics.
dc.format
8 p.
dc.format
application/pdf
dc.language
eng
dc.publisher
American Institute of Physics
dc.relation
Reproducció del document publicat a: http://dx.doi.org/10.1063/1.3476286
dc.relation
Journal of Applied Physics, 2010, vol. 108, núm. 5, p. 53518-1-53518-8
dc.relation
http://dx.doi.org/10.1063/1.3476286
dc.relation
info:eu-repo/grantAgreement/EC/FP7/224312/EU//HELIOS
dc.relation
info:eu-repo/grantAgreement/EC/FP6/033574/EU//LANCER
dc.rights
(c) American Institute of Physics, 2010
dc.rights
info:eu-repo/semantics/openAccess
dc.source
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
dc.subject
Semiconductors
dc.subject
Nanopartícules
dc.subject
Semiconductors
dc.subject
Nanoparticles
dc.title
Energy transfer mechanism and Auger effect in Er3+ coupled silicon nanoparticle samples
dc.type
info:eu-repo/semantics/article
dc.type
info:eu-repo/semantics/publishedVersion


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