dc.contributor.author
Blázquez Gómez, Josep Oriol
dc.contributor.author
Frieiro Castro, Juan Luis
dc.contributor.author
López Vidrier, Julià
dc.contributor.author
Guillaume, Clément
dc.contributor.author
Portier, Xavier
dc.contributor.author
Labbé, Christophe
dc.contributor.author
Sanchis, Pablo
dc.contributor.author
Hernández Márquez, Sergi
dc.contributor.author
Garrido Fernández, Blas
dc.date.issued
2020-01-20T11:08:12Z
dc.date.issued
2020-01-20T11:08:12Z
dc.date.issued
2018-10-29
dc.date.issued
2020-01-20T11:08:12Z
dc.identifier
https://hdl.handle.net/2445/148184
dc.description.abstract
The resistive switching properties of ITO/ZnO/p-Si devices have been studied, which present welldefined resistance states with more than five orders of magnitude difference in current. Both the high resistance state (HRS) and the low resistance state (LRS) were induced by either sweeping or pulsing the voltage, observing some differences in the HRS. Finally, the charge transport mechanisms dominating the pristine, HRS, and LRS states have been analyzed in depth, and the obtained structural parameters suggest a partial re-oxidation of the conductive nanofilaments and a reduction of the effective conductive area. Published by AIP Publishing. https://doi.org/10.1063/1.5046911
dc.format
application/pdf
dc.publisher
American Institute of Physics
dc.relation
Reproducció del document publicat a: https://doi.org/10.1063/1.5046911
dc.relation
Applied Physics Letters, 2018, vol. 113, num. 183502
dc.relation
https://doi.org/10.1063/1.5046911
dc.rights
(c) American Institute of Physics , 2018
dc.rights
info:eu-repo/semantics/openAccess
dc.source
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
dc.subject
Pel·lícules fines
dc.subject
Teoria de la commutació
dc.subject
Nanoelectrònica
dc.subject
Switching theory
dc.subject
Nanoelectronics
dc.title
Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices
dc.type
info:eu-repo/semantics/article
dc.type
info:eu-repo/semantics/publishedVersion
