Universitat de Barcelona
2020-01-20T11:08:12Z
2020-01-20T11:08:12Z
2018-10-29
2020-01-20T11:08:12Z
The resistive switching properties of ITO/ZnO/p-Si devices have been studied, which present welldefined resistance states with more than five orders of magnitude difference in current. Both the high resistance state (HRS) and the low resistance state (LRS) were induced by either sweeping or pulsing the voltage, observing some differences in the HRS. Finally, the charge transport mechanisms dominating the pristine, HRS, and LRS states have been analyzed in depth, and the obtained structural parameters suggest a partial re-oxidation of the conductive nanofilaments and a reduction of the effective conductive area. Published by AIP Publishing. https://doi.org/10.1063/1.5046911
Article
Published version
English
Òxid de zinc; Pel·lícules fines; Teoria de la commutació; Nanoelectrònica; Zinc oxide; Thin films; Switching theory; Nanoelectronics
American Institute of Physics
Reproducció del document publicat a: https://doi.org/10.1063/1.5046911
Applied Physics Letters, 2018, vol. 113, num. 183502
https://doi.org/10.1063/1.5046911
(c) American Institute of Physics , 2018
