Low-power, high-performance, non-volatile inkjet-printed HfO 2 -based resistive random access memory : from device to nanoscale characterization

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dc.contributor.author	Vescio, Giovanni
dc.contributor.author	Martín, Gemma
dc.contributor.author	Crespo-Yepes, Albert
dc.contributor.author	Claramunt, Sergi
dc.contributor.author	Alonso, Daniel
dc.contributor.author	Lopez-Vidrier, Julian
dc.contributor.author	Estrade, Sonia
dc.contributor.author	Porti i Pujal, Marc
dc.contributor.author	Rodríguez Martínez, Rosana
dc.contributor.author	Peiro, Francesca
dc.contributor.author	Cornet, Albert
dc.contributor.author	Cirera, Albert
dc.contributor.author	Nafría i Maqueda, Montserrat
dc.date	2019
dc.identifier	https://ddd.uab.cat/record/249163
dc.identifier	urn:10.1021/acsami.9b01731
dc.identifier	urn:oai:ddd.uab.cat:249163
dc.identifier	urn:pmid:31180626
dc.identifier	urn:pure_id:32993486
dc.identifier	urn:scopus_id:85069266736
dc.identifier	urn:wos_id:000474670100082
dc.identifier	urn:articleid:19448252v11n26p23659
dc.format	application/pdf
dc.language	eng
dc.publisher
dc.relation	Ministerio de Economía y Competitividad MAT2015-66443-C2-2-R
dc.relation	Ministerio de Economía y Competitividad TEC2013-45638-C3-1-R
dc.relation	Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-384
dc.relation	ACS applied materials & interfaces ; Vol. 11, issue 26 (2019), p. 23659-23666
dc.rights	open access
dc.rights	Tots els drets reservats.
dc.rights	https://rightsstatements.org/vocab/InC/1.0/
dc.subject	Inkjet-printed ReRAM
dc.subject	High-k HfO2
dc.subject	Cost-efficient technology
dc.subject	High-performance resistive switching
dc.subject	TEM
dc.title	Low-power, high-performance, non-volatile inkjet-printed HfO 2 -based resistive random access memory : from device to nanoscale characterization
dc.type	Article
dc.description.abstract	Altres ajuts: G. Vesio acknowledges the Spanish Government for his Ph.D. grant in the FPU program.
dc.description.abstract	Low-power, high-performance metal-insulator-metal (MIM) non-volatile resistive memories based on HfO2 high-k dielectric are fabricated using a drop-on-demand inkjet printing technique as a low-cost and eco-friendly method. The characteristics of resistive switching of Pt (bottom)/HfO2/Ag (top) stacks on Si/ SiO2 substrates are investigated in order to study the bottom electrode's interaction with the HfO2 dielectric layer and the resulting effects on resistive switching. The devices show low Set and Reset voltages, high ON/OFF current ratio, and relatively low switching current (~1 μA), which are comparable to the characteristics of current commercial CMOS memories. In order to understand the resistive switching mechanism, direct structural observation is carried out by field-emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HRTEM) on cross-sectioned samples prepared by focused ion beam (FIB). In addition, electron energy loss spectroscopy (EELS) inspections discard a silver electro-migration effect.

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