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Title:
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A comprehensive high-level model for CMOS-MEMS resonators
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Author:
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Banerji, Saoni; Fernández, Daniel; Madrenas Boadas, Jordi
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Other authors:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. ISSET - Integrated Smart Sensors and Health Technologies |
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Abstract:
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2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
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Abstract:
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This paper presents a behavioral modeling technique for CMOS microelectromechanical systems (MEMS) microresonators that enables simulation of an MEMS resonator model in Analog Hardware Description Language format within a system-level circuit simulation. A 100-kHz CMOS-MEMS resonant pressure sensor has been modeled into Verilog-A code and successfully simulated within Cadence framework. Analysis has shown that simulation results of the reported model are in agreement with the device characterization results. As an application of the proposed methodology, simulation and results of the model together with an integrated monolithic low-noise amplifier is exemplified for detecting the position change of the resonator. |
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Abstract:
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Peer Reviewed |
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Subject(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura::Sensors i actuadors
-Integrated circuits
-Detectors
-Co-simulation
-CMOS-MEMS
-Microresonators
-Behavioral modeling
-AHDL
-Circuits integrats
-Detectors |
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Rights:
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Document type:
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Article - Submitted version
Article |
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