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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. MCIA - Motion Control and Industrial Applications Research Group |
dc.contributor.author | Paredes Camacho, Alejandro |
dc.contributor.author | Sala Caselles, Vicenç |
dc.contributor.author | Ghorbani, Hamidreza |
dc.contributor.author | Romeral Martínez, José Luis |
dc.date | 2017-11-01 |
dc.identifier.citation | Paredes, A., Sala, V., Ghorbani, H., Romeral, L. A novel active gate driver for improving SiC MOSFET switching trajectory. "IEEE transactions on industrial electronics", 1 Novembre 2017, vol. 64, núm. 11, p. 1-11. |
dc.identifier.citation | 0278-0046 |
dc.identifier.citation | 10.1109/TIE.2017.2719603 |
dc.identifier.uri | http://hdl.handle.net/2117/116639 |
dc.language.iso | eng |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) |
dc.relation | http://ieeexplore.ieee.org/document/7956275/ |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica |
dc.subject | Electronic apparatus and appliances |
dc.subject | Driver circuits |
dc.subject | electromagnetic interference (EMI) |
dc.subject | silicon carbide (SiC) MOSFET |
dc.subject | switching losses |
dc.subject | switching transients |
dc.subject | Electrònica -- Aparells i instruments |
dc.subject | Enginyeria elèctrica |
dc.subject | Enginyeria electrònica |
dc.subject | Metall-òxid-semiconductors |
dc.title | A novel active gate driver for improving SiC MOSFET switching trajectory |
dc.type | info:eu-repo/semantics/submittedVersion |
dc.type | info:eu-repo/semantics/article |
dc.description.abstract |