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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.contributor.author | Orpella García, Alberto |
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Puigdollers i González, Joaquim |
dc.contributor.author | Dosev, D |
dc.contributor.author | Fonrodona, Marta |
dc.contributor.author | Soler Vilamitjana, David |
dc.contributor.author | Bertomeu Balaguero, Joan |
dc.contributor.author | Asensi, J M |
dc.contributor.author | Andreu Batallé, Jordi |
dc.contributor.author | Alcubilla González, Ramón |
dc.date | 2001-09 |
dc.identifier.citation | Orpella, A., Voz, C., Puigdollers, J., Dosev, D., Fonrodona, M., Soler, D., Bertomeu, J., Asensi, J., Andreu Batallé, Jordi, Alcubilla, R. Stability of hidrogenated nanocrystalline silicon thin-film transistors. "Thin solid films", Setembre 2001, vol. 395, núm. 1-2, p. 335-338. |
dc.identifier.citation | 0040-6090 |
dc.identifier.citation | 10.1016/S0040-6090(01)01290-1 |
dc.identifier.uri | http://hdl.handle.net/2117/112823 |
dc.language.iso | eng |
dc.relation | http://www.sciencedirect.com/science/article/pii/S0040609001012901 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors |
dc.subject | Silicon-carbide thin film |
dc.subject | Hydrogenated nanocrystalline silicon thin-films |
dc.subject | Catalytic chemical vapour deposition |
dc.subject | Substrate temperature |
dc.subject | Deposition rate |
dc.subject | Capes fines de carbur de silici |
dc.title | Stability of hidrogenated nanocrystalline silicon thin-film transistors |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.type | info:eu-repo/semantics/article |
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