Título:
|
Stability of hidrogenated nanocrystalline silicon thin-film transistors
|
Autor/a:
|
Orpella García, Alberto; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Dosev, D; Fonrodona, Marta; Soler Vilamitjana, David; Bertomeu Balaguero, Joan; Asensi, J M; Andreu Batallé, Jordi; Alcubilla González, Ramón
|
Otros autores:
|
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
Abstract:
|
Hydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150°C) and high deposition rates (10 Å/s). These films, with crystalline fractions over 90%, were incorporated as the active layers of bottom-gate thin-film transistors. The initial field-effect mobilities of these devices were over 0.5 cm2/V s and the threshold voltages lower than 4 V. In this work, we report on the enhanced stability of these devices under prolonged times of gate bias stress compared to amorphous silicon thin-film transistors. Hence, they are promising candidates to be considered in the future for applications such as flat-panel displays. |
Abstract:
|
Peer Reviewed |
Materia(s):
|
-Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors -Silicon-carbide thin film -Hydrogenated nanocrystalline silicon thin-films -Catalytic chemical vapour deposition -Substrate temperature -Deposition rate -Capes fines de carbur de silici |
Derechos:
|
|
Tipo de documento:
|
Artículo - Versión publicada Artículo |
Compartir:
|
|