Optical and compositional characterization of GaAs(Ti) thin films deposited by R.F. magnetron sputtering

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dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.contributor.author	Boronat, Artur
dc.contributor.author	Silvestre Bergés, Santiago
dc.contributor.author	Castañer Muñoz, Luis María
dc.date	2013-01
dc.identifier.citation	Boronat, A.; Silvestre, S.; Castañer, L. Optical and compositional characterization of GaAs(Ti) thin films deposited by R.F. magnetron sputtering. "Journal of non-crystalline solids", Gener 2013, vol. 359, núm. 1, p. 21-26.
dc.identifier.citation	0022-3093
dc.identifier.citation	10.1016/j.jnoncrysol.2012.09.017
dc.identifier.uri	http://hdl.handle.net/2117/19895
dc.language.iso	eng
dc.relation	http://www.sciencedirect.com/science/article/pii/S0022309312005637
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights	info:eu-repo/semantics/openAccess
dc.rights	http://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subject	Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Telecomunicació òptica::Fotònica
dc.subject	Solar cells
dc.subject	GaAs(Ti)
dc.subject	Intermediate band (IB)
dc.subject	Sputtering
dc.subject	Cèl·lules solars
dc.title	Optical and compositional characterization of GaAs(Ti) thin films deposited by R.F. magnetron sputtering
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/article
dc.description.abstract	GaAs thin films with Ti incorporated, to which we refer to as GaAs(Ti), have been deposited by R.F. sputtering on fused silica and c-GaAs substrates under different process conditions. The films were characterized by EPMA, XPS and XRD to study the composition and structural dependence on the deposition conditions, paying special attention on the Ti content of the films. The optical responses of the films were analyzed by spectrofotometric, PDS and FTIR measurements. The Ti content is in all the samples above 1020 atoms/cm3, so we can consider them as GaAs films highly Ti doped. It has been observed that an evolution of the Ga/As atomic content in relation with the Ti incorporation, which together with the results obtained from XPS measurements, indicates a possible substitution of Ga by Ti atoms in the deposited films.
dc.description.abstract	Peer Reviewed

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