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Title:	Sub-Bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells
Author:	Silvestre Bergés, Santiago; Boronat Moreiro, Alfredo; Colina Brito, Mónica Alejandra; Castañer Muñoz, Luis María; Olea, Javier; Pastor, David; DelPrado, A.; Martil, Ignacio; Gonzalez Diaz, German; Luque, Antonio; Antolin, Elisa; Hernandez, Estela; Ramiro, Iñigo; Artacho, Irene; López, Esther; Martí, Antonio
Other authors:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
Abstract:	In this work we present the manufacturing processes and results obtained from the characterization of heterojunction with intrinsic thin layer solar cells that include a heavily Ti ion implanted Si absorbing layer. The cells exhibit external circuit photocurrent at photon energies well below the Si bandgap. We discuss the origin of this below-bandgap photocurrent and the modifications in the hydrogenated amorphous intrinsic Si layer thickness to increase the open-circuit voltage.
Abstract:	Peer Reviewed
Subject(s):	-Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars -Solar cells -Cèl·lules solars
Rights:	Attribution-NonCommercial-NoDerivs 3.0 Spain http://creativecommons.org/licenses/by-nc-nd/3.0/es/
Document type:	Article - Published version Article
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