Optical measurements on GaAs(Ti) thin films sputtered on GaAs

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To access the full text documents, please follow this link: http://hdl.handle.net/2117/12982

dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.contributor.author	Boronat Moreiro, Alfredo
dc.contributor.author	Silvestre Bergés, Santiago
dc.contributor.author	Castañer Muñoz, Luis María
dc.date	2011
dc.identifier.citation	Boronat, A.; Silvestre, S.; Castañer, L. Optical measurements on GaAs(Ti) thin films sputtered on GaAs. A: Spanish Conference on Electron Devices. "8th Spanish Conference on Electron Devices". Palma de Mallorca: 2011, p. 1-3.
dc.identifier.citation	978-142447863-7
dc.identifier.citation	10.1109/SCED.2011.5744250
dc.identifier.uri	http://hdl.handle.net/2117/12982
dc.language.iso	eng
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights	info:eu-repo/semantics/openAccess
dc.rights	http://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subject	Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Telecomunicació òptica::Fotònica
dc.subject	Temperature measurements
dc.subject	Gallium arsenide
dc.subject	Termometria
dc.subject	Arseniür de gal·li
dc.title	Optical measurements on GaAs(Ti) thin films sputtered on GaAs
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/conferenceObject
dc.description.abstract	Some sputtering processes of GaAs(Ti) onto c-GaAs have been carried out in order to obtain thin films as candidates to be intermediate band photovoltaic materials. This work presents the results obtained in the study of the absorptance, from transmittance and reflectance responses, in samples obtained at different conditions of temperature and power during the sputtering deposition.
dc.description.abstract	Peer Reviewed

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