To access the full text documents, please follow this link: http://hdl.handle.net/2445/24809
dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Gomila Lluch, Gabriel |
dc.contributor.author | Bulashenko, Oleg |
dc.date | 2012-05-03T08:53:10Z |
dc.date | 2012-05-03T08:53:10Z |
dc.date | 1999-07-15 |
dc.date | 2012-04-20T11:18:45Z |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 517053 |
dc.identifier.uri | http://hdl.handle.net/2445/24809 |
dc.format | 9 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.370839 |
dc.relation | Journal of Applied Physics, 1999, vol. 86, núm. 2, p. 1004-1012 |
dc.relation | http://dx.doi.org/10.1063/1.370839 |
dc.rights | (c) American Institute of Physics, 1999 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Microelectrònica |
dc.subject | Matèria condensada |
dc.subject | Microelectronics |
dc.subject | Condensed matter |
dc.title | Effects of the epitaxial layer thickness on the noise properties of Schottky barrier diodes |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |