Altres ajuts: acords transformatius de la UAB

Complementary Resistive Switching (CRS) using memristive devices has been intensively investigated in the last decade. The objective of CRS is to generate low and high resistance windows in the I-V characteristic of the selector device with the aim of reducing the sneak-path conduction problem in crossbar arrays. Though a wide variety of compact models for CRS have been proposed, the one presented here stands out for its simplicity, robustness, and accuracy. The flexibility of the memdiode model is demonstrated through a series of fitting exercises using experimental data found in the literature. The model script for the LTSpice XVII simulator is also provided.