Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices

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Title:	Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices
Author:	Blázquez, O. (Oriol); Frieiro Castro, Juan Luis; López Vidrier, Julian; Guillaume, Clément; Portier, Xavier; Labbé, C.; Sanchis, Pablo; Hernández Márquez, Sergi; Garrido, Blas
Other authors:	Universitat de Barcelona
Abstract:	The resistive switching properties of ITO/ZnO/p-Si devices have been studied, which present welldefined resistance states with more than five orders of magnitude difference in current. Both the high resistance state (HRS) and the low resistance state (LRS) were induced by either sweeping or pulsing the voltage, observing some differences in the HRS. Finally, the charge transport mechanisms dominating the pristine, HRS, and LRS states have been analyzed in depth, and the obtained structural parameters suggest a partial re-oxidation of the conductive nanofilaments and a reduction of the effective conductive area. Published by AIP Publishing. https://doi.org/10.1063/1.5046911
Subject(s):	-Òxid de zinc -Pel·lícules fines -Teoria de la commutació -Nanoelectrònica -Zinc oxide -Thin films -Switching theory -Nanoelectronics
Rights:	(c) American Institute of Physics , 2018
Document type:	Article Article - Published version
Published by:	American Institute of Physics
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