Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor

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dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.contributor.author	Ros Costals, Eloi
dc.contributor.author	Puigdollers i González, Joaquim
dc.contributor.author	Ortega Villasclaras, Pablo Rafael
dc.contributor.author	Voz Sánchez, Cristóbal
dc.date	2020-01-09
dc.identifier.citation	Ros, E. [et al.]. Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor. "IEEE Journal of the Electron Devices Society", 9 Gener 2020.
dc.identifier.citation	2168-6734
dc.identifier.citation	10.1109/JEDS.2020.2965213
dc.identifier.uri	http://hdl.handle.net/2117/175469
dc.language.iso	eng
dc.publisher	Institute of Electrical and Electronics Engineers (IEEE)
dc.relation	https://ieeexplore.ieee.org/document/8714731
dc.relation	info:eu-repo/grantAgreement/AEI/2PE/ENE2017-87671-C3-2-R
dc.relation	info:eu-repo/grantAgreement/ES/1PE/ENE2016-78933-C4-1-R
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
dc.subject	Thin films
dc.subject	OTFT
dc.subject	NDR
dc.subject	Organic semiconductors
dc.subject	Density of states
dc.subject	Capes fines
dc.title	Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor
dc.type	info:eu-repo/semantics/submittedVersion
dc.type	info:eu-repo/semantics/article
dc.description.abstract	© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
dc.description.abstract	In this work, we have fabricated and studied p-type picene thin-film transistors. Although the devices exhibited good electrical performance with high field-effect mobility (up to 1.3 cm 2 /V·s) and on/off ratios above 10 5 , the output electric characteristics of the devices exhibited a Negative Differential Resistance for higher drain-source voltage. Finally, a possible explanation for this phenomenon is developed.
dc.description.abstract	Peer Reviewed

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