Title:
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Efficiency analysis of wide band-gap semiconductors for two-level and three-level power converters
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Author:
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Lumbreras Carrasco, David; Zaragoza Bertomeu, Jordi; Mon González, Juan; Gálvez, Eduardo; Collado Escolano, Alfonso
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Other authors:
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Universitat Politècnica de Catalunya. Doctorat en Enginyeria Electrònica; Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. TIEG - Terrassa Industrial Electronics Group |
Abstract:
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Abstract:
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Power devices based on wide band-gap materials are emerging as alternatives to silicon-based devices. These new devices allow designing and building converters with fewer power losses, and are thus more highly efficient than traditional power converters. Among the wide band-gap materials in use, silicon carbide (SiC) and gallium nitride (GaN) devices are the most promising because of their excellent properties and commercial availability. This paper compares the losses produced in two-level and three-level power converters that use the aforementioned technologies. In addition, we assess the impact on the converter performance caused by the modulation technique. Simulation results under various operating points are reported and compared. |
Abstract:
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Peer Reviewed |
Subject(s):
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-Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors -Wide gap semiconductors -Gallium Nitride (GaN) -Losses -Modulation techniques -Neutral-Point Clamped Converter (NPC) -PLECS -Silicon -Silicon Carbide (SiC) -Wide band-gap semiconductors -Semiconductors de gap ampl |
Rights:
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Document type:
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Article - Submitted version Conference Object |
Published by:
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Institute of Electrical and Electronics Engineers (IEEE)
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