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Heterojunction solar cells based on molybdenum sub-oxide (MoOx) deposited on n-type crystalline silicon have been fabricated. The hole selective character of MoOx is explained by its high workfunction, which causes a strong band bending in the Si substrate. This bending pushes the surface into inversion. In addition, the sub-stoichiometry of the evaporated MoOx layers leads to a high density of states within the bandgap. This is crucial for charge transport. The J-V electrical characteristics at several temperatures were analysed to elucidate the dominant charge transport mechanisms of this heterojunction structure. We have identified two different transport mechanisms. At low bias voltage, transport is dominated by hole tunnelling through the MoOx gap states. At higher voltage the behaviour is similar to a Schottky junction with a high barrier value, due to the high MoOx work function. These results provide a better understanding of the hole selective character of MoOx/n-type silicon heterocontacts, which is key to further improve this new kind of solar cells.

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