Títol:
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N-type PTCDI¿C13H27 thin-film transistors deposited at different substrate temperature
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Autor/a:
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Puigdollers i González, Joaquim; Pirriera, Della M; Marsal Vinade, Albert; Orpella García, Alberto; Cheylan, Stephanie; Voz Sánchez, Cristóbal; Alcubilla González, Ramón
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Altres autors:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
Abstract:
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N-type organic thin-film transistors based on N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide have been fabricated by thermal evaporation at different substrate temperatures. The best device was obtained at 120 °C with a field-effect mobility of 0.12 cm2/V·s and threshold voltage around 46 V. In this work, the microstructure of the films is correlated with the device performance. In particular, the dependence of the activation energy for the channel conductance on gate voltages has been related to the properties of the layers. |
Abstract:
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Peer Reviewed |
Matèries:
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-Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors -Thin films -PTCDI–C13H27 -Thin-film transistors -DOS -Capes fines |
Drets:
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Tipus de document:
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Article - Versió publicada Article |
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