Characterization and application of a-SiCx:H films for the passivation of the c-Si surface

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To access the full text documents, please follow this link: http://hdl.handle.net/2117/112873

dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.contributor.author	Martín Campos, Ignacio Clemente
dc.contributor.author	Vetter, M
dc.contributor.author	Orpella García, Alberto
dc.contributor.author	Puigdollers i González, Joaquim
dc.contributor.author	Voz Sánchez, Cristóbal
dc.contributor.author	Marsal, L F
dc.contributor.author	Pallarès Marzal, Josep
dc.contributor.author	Alcubilla González, Ramón
dc.date	2002-01
dc.identifier.citation	Martin, I., Vetter, M., Orpella, A., Puigdollers, J., Voz, C., Marsal, L., Pallarès, J., Alcubilla, R. Characterization and application of a-SiCx:H films for the passivation of the c-Si surface. "Thin solid films", Gener 2002, vol. 403-404, p. 476-479.
dc.identifier.citation	0040-6090
dc.identifier.citation	10.1016/S0040-6090(01)01648-0
dc.identifier.uri	http://hdl.handle.net/2117/112873
dc.language.iso	eng
dc.relation	http://www.sciencedirect.com/science/article/pii/S0040609001016480
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
dc.subject	Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
dc.subject	Solar cells
dc.subject	Amorphous semiconductors
dc.subject	Surface passivation
dc.subject	Amorphous semiconductors
dc.subject	Solar cells
dc.subject	Cèl·lules solars
dc.subject	Semiconductors amorfs
dc.title	Characterization and application of a-SiCx:H films for the passivation of the c-Si surface
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/article
dc.description.abstract	In this work we investigate the effects of typical thermal treatments on c-Si surface passivation by intrinsic a-SiCx:H films. First, a forming gas anneal (FGA), (400 °C, 30 min in H2/N2) is applied resulting in an improvement in surface passivation. The best result is a surface recombination velocity lower than 23 cm s-1. A second thermal step (730 °C, 30 s) is studied to try and simulate the firing step for screen-printed contacts. This annealing has no effect in surface passivation indicating that a-SiCx:H films are promising candidates for c-Si surface passivation in the photovoltaic industry. In order to analyze the improvement of surface passivation after FGA, a physical model of surface recombination at the a-SiCx:H/c-Si interface is developed. This improvement is directly connected to a reduction in fundamental recombination velocities of electrons and holes at the interface. A possible explanation could be the reduction in the interface state density due to hydrogen saturation of dangling bonds.
dc.description.abstract	Peer Reviewed

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