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Emitter formation using laser doping technique on n- and p-type c-Si substrates
López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Colina Brito, Mónica Alejandra; Voz Sánchez, Cristóbal; Morales Vilches, Ana Belén; Orpella García, Alberto; Alcubilla González, Ramón
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
In this work laser doping technique is used to create highly-doped regions defined in a point-like structure to form n+/p and p+/n junctions applying a pulsed Nd-YAG 1064 nm laser in the nanosecond regime. In particular, phosphorous-doped silicon carbide stacks (a-SiC x /a-Si:H (n-type)) deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and aluminum oxide (Al 2 O 3 ) layers deposited by atomic layer deposition (ALD) on 2 ± 0.5 cm p- and n-type FZ c-Si substrates respectively are used as dopant sources. Laser power and number of pulses per spot are explored to obtain the optimal electrical behavior of the formed junctions. To assess the quality of the p+ and n+ regions, the junctions are electrically contacted and characterized by means of dark J–V measurements. Additionally, a diluted HF treatment previous to front metallization has been explored in order to know its impact on the junction quality. The results show that fine tuning of the energy pulse is critical while the number of pulses has minor effect. In general the different HF treatments have no impact in the diode electrical behavior except for an increase of the leakage current in n+/p junctions. The high electrical quality of the junctions makes laser doping, using dielectric layers as dopant source, suitable for solar cell applications. Particularly, a potential open circuit voltage of 0.64 V (1 sun) is expected for a finished solar cell.
Peer Reviewed
Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
Àrees temàtiques de la UPC::Enginyeria dels materials::Materials funcionals::Materials elèctrics i electrònics
Àrees temàtiques de la UPC::Enginyeria electrònica::Optoelectrònica::Làser
Solar cells
Materials -- Electric properties
Lasers -- Industrial applications
Cèl·lules solars
Materials -- Propietats elèctriques
Làsers -- Aplicacions industrials
info:eu-repo/semantics/submittedVersion
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López Rodríguez, Gema; Ortega Villasclaras, Pablo Rafael; Voz Sánchez, Cristóbal; Martín García, Isidro; Colina Brito, Mónica Alejandra; Morales Vilches, Ana Belén; Orpella García, Alberto; Alcubilla González, Ramón
Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Colina Brito, Mónica Alejandra; López Rodríguez, Gema; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón
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Colina Brito, Mónica Alejandra; Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; López Rodríguez, Gema; Alcubilla González, Ramón
 

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