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Electrical transport and impedance analysis of Au/porous silicon thin films
Fonthal, Faruk; Goyes, C; Rodríguez Martínez, Ángel
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
In order to obtain electronic devices based on PS/p-Si structure, we present a study the AC conductivity and Thermo-electrical behavior of Porous Silicon (PS) layers prepared by electrochemical etching in p-type silicon (p-Si) <100> substrates. The beginning is obtaining good electrical contacts on porous layer; for this reason, several Au/PS/Au junctions were electrically characterized to understand the transport mechanisms in porous surface and the temperature dependence in the porous properties studied, also the resistance-temperature characteristic of PS/p-Si thermistor device. Finally, we obtained the AC conductivity in modulo and phase; an electrical equivalent circuit was proposed to fit the experimental frequency response of the different sample
Electronic engineering
Porous Silicon
Electrochemical etching
Electrical conductivity
Electrical equivalent circuit
Metal-semiconductor-metal structure
Enginyeria electrònica
Attribution-NonCommercial-NoDerivs 3.0 Spain
IEEE Press. Institute of Electrical and Electronics Engineers

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