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Third order intermodulation distorsion in film bulk acoustic resonators at resonance and antiresonance
Rocas Cantenys, Eduard; Collado Gómez, Juan Carlos; Mateu Mateu, Jordi; Campanella, Humberto; O'Callaghan Castellà, Juan Manuel
Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions; Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
This paper presents recent measurements and modeling of the third order intermodulation products of a Film Bulk Acoustic Resonator (FBAR), for a various values of frequency spacing between driving tones. The frequency dependence of voltage and current in the acoustic branch rules out a voltage-dependent nonlinearity. The results show different slopes at resonance and antiresonance, which are correctly adjusted by the model with a current dependent inductor and/or capacitor. The intermodulation distortion is found to be dependent on the frequency spacing between driving tones, indicating memory effects.
Peer Reviewed
Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques
Resonators
Acoustic branch rules
Acoustic resonators
Antiresonance
Driving tones
Film bulk acoustic resonators
Frequency spacing
Inductor
Intermodulation distortion
Nonlinear characterization resonance
Thin film devices
FBAR
Ressonadors
info:eu-repo/semantics/conferenceObject
IEEE
         

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