Título:
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Epitaxial growth of Y-doped SrZrO3 films on MgO by pulsed laser deposition
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Autor/a:
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Beckers, L.; Sánchez Barrera, Florencio; Schubert, J.; Zander, W.; Buchal, Ch.
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Otros autores:
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Universitat de Barcelona |
Abstract:
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Epitaxial thin films of Y¿doped SrZrO3 have been grown on MgO(001) by pulsed laser deposition. The deposition process has been performed at temperatures of 1000¿1200¿°C and at an oxygen pressure of 1.5×10¿1 mbar. The samples are characterized by Rutherford backscattering spectrometry/channeling (RBS/C) and x¿ray diffraction (XRD). We found an epitaxial relationship of SrZrO3 (0k0) [101]¿MgO (001) [100]. Good crystalline quality is confirmed by RBS/C minimum yield values of 9% and a FWHM of 0.35° of the XRD rocking curve. |
Materia(s):
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-Pel·lícules fines -Làsers -Ions -Superconductivitat -Thin films -Lasers -Ions -Superconductivity |
Derechos:
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(c) American Institute of Physics, 1996
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Tipo de documento:
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Artículo Artículo - Versión publicada |
Editor:
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American Institute of Physics
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