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dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Furtmayr, Florian |
dc.contributor.author | Vielemeyer, Martin |
dc.contributor.author | Stutzmann, Martin |
dc.contributor.author | Arbiol i Cobos, Jordi |
dc.contributor.author | Estradé Albiol, Sònia |
dc.contributor.author | Peiró Martínez, Francisca |
dc.contributor.author | Morante i Lleonart, Joan Ramon |
dc.contributor.author | Eickhoff, Martin |
dc.date | 2012-05-03T12:27:14Z |
dc.date | 2012-05-03T12:27:14Z |
dc.date | 2008-08-08 |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 561118 |
dc.identifier.uri | http://hdl.handle.net/2445/24892 |
dc.format | 7 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.2953087 |
dc.relation | Journal of Applied Physics, 2008, vol. 104, num. 3, p. 034309-1-034309-7 |
dc.relation | http://dx.doi.org/10.1063/1.2953087 |
dc.rights | (c) American Institute of Physics, 2008 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Cristal·lografia |
dc.subject | Ciència dels materials |
dc.subject | Crystallography |
dc.subject | Materials scienc |
dc.title | Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |