Título:
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Size dependence of refractive index of Si nanoclusters embedded in SiO2
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Autor/a:
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Moreno Pastor, José Antonio; Garrido Fernández, Blas; Pellegrino, Paolo; García Favrot, Cristina; Arbiol i Cobos, Jordi; Morante i Lleonart, Joan Ramon; Marie, P.; Gourbilleau, Fabrice; Rizk, Richard
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Otros autores:
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Universitat de Barcelona |
Abstract:
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he complex refractive index of SiO2 layers containing Si nanoclusters (Si-nc) has been measured by spectroscopic ellipsometry in the range from 1.5 to 5.0 eV. It has been correlated with the amount of Si excess accurately measured by x-ray photoelectron spectroscopy and the nanocluster size determined by energy-filtered transmission electron microscopy. The Si-nc embedded in SiO2 have been produced by a fourfold Si+ ion implantation, providing uniform Si excess aimed at a reliable ellipsometric modeling. The complex refractive index of the Si-nc phase has been calculated by the application of the Bruggeman effective-medium approximation to the composite media. The characteristic resonances of the refractive index and extinction coefficient of bulk Si vanish out in Si-nc. In agreement with theoretical simulations, a significant reduction of the refractive index of Si-nc is observed, in comparison with bulk and amorphous silicon. The knowledge of the optical properties of these composite layers is crucial for the realization of Si-based waveguides and light-emitting devices. |
Materia(s):
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-Propietats òptiques -Matèria condensada -Espectroscòpia -Cristal·lografia -Optical properties -Condensed matter -Spectrum analysis -Crystallography |
Derechos:
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(c) American Institute of Physics, 1984
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Tipo de documento:
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Artículo Artículo - Versión publicada |
Editor:
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American Institute of Physics
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