dc.contributor.author
Roura Grabulosa, Pere
dc.contributor.author
Benyattou, T.
dc.contributor.author
Guillot, G.
dc.contributor.author
Moncorge, R.
dc.contributor.author
Ulrici, W.
dc.date.issued
2009-10-28T09:32:00Z
dc.date.issued
2009-10-28T09:32:00Z
dc.identifier
https://hdl.handle.net/2445/9849
dc.description.abstract
The time dependence of the
2
T
2
→
2
E photoluminescence transition of
Ti
3
+
Ga
in GaP has been measured on semi-insulating, p-type conducting, and n-type conducting samples. A decay time
τ
0
=2.0 μs was obtained at T=10 K. The temperature dependence of the decay time in the conducting samples is found to be affected by the capture of free carriers by
Ti
3
+
Ga
in the excited state whereas the results on p-type conducting samples suggest hole localization at the
Ti
3
+
Ga
.
dc.format
application/pdf
dc.publisher
The American Physical Society
dc.relation
Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.45.11698
dc.relation
Physical Review B, 1992, vol. 45, núm. 20, p. 11698-11701.
dc.relation
http://dx.doi.org/10.1103/PhysRevB.45.11698
dc.rights
(c) The American Physical Society, 1992
dc.rights
info:eu-repo/semantics/openAccess
dc.source
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
dc.subject
Semiconductors
dc.subject
Photoluminescence
dc.subject
Semiconductors
dc.title
Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaP
dc.type
info:eu-repo/semantics/article
dc.type
info:eu-repo/semantics/publishedVersion
