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Spatial mapping of exciton lifetimes in single ZnO nanowires

Author

Reparaz, J. S.

Callsen, G.

Wagner, M. R.

Güell Vilà, Frank

Morante i Lleonart, Joan Ramon

Sotomayor Torres, C. M.

Hoffmann, A.

Publication date

2014-03-24T10:58:12Z

2014-03-24T10:58:12Z

2013

2014-03-24T10:58:12Z

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Abstract

We investigate the spatial dependence of the exciton lifetimes in single ZnO nanowires. We have found that the free exciton and bound exciton lifetimes exhibit a maximum at the center of nanowires, while they decrease by 30% towards the tips. This dependence is explained by considering the cavity-like properties of the nanowires in combination with the Purcell effect. We show that the lifetime of the bound-excitons scales with the localization energy to the power of 3/2, which validates the model of Rashba and Gurgenishvili at the nanoscale.

Document Type

Article

Published version

Language

English

Subjects and keywords

Nanoelectrònica; Semiconductors; Optoelectrònica; Òxid de zinc; Luminescència; Nanoelectronics; Semiconductors; Optoelectronics; Zinc oxide; Luminescence

Publisher

AIP Publishing

Related items

Reproducció del document publicat a: http://dx.doi.org/10.1063/1.4808441

APL Materials, 2013, vol. 1, p. 012103-1-012103-7

http://dx.doi.org/10.1063/1.4808441

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Rights

cc-by (c) Reparaz, J. S. et al., 2013

http://creativecommons.org/licenses/by/3.0/es

This item appears in the following Collection(s)

Enginyeria Electrònica i Biomèdica [781]

ISGlobal - Institut de Salut Global de Barcelona [60807]