dc.contributor.author
Roura Grabulosa, Pere
dc.contributor.author
López de Miguel, Manuel
dc.contributor.author
Cornet i Calveras, Albert
dc.contributor.author
Morante i Lleonart, Joan Ramon
dc.date.issued
2012-05-03T06:33:05Z
dc.date.issued
2012-05-03T06:33:05Z
dc.date.issued
1997-05-15
dc.identifier
https://hdl.handle.net/2445/24784
dc.description.abstract
A series of InxAl12xAs samples (0.51,x,0.55) coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x50.532, at 14 K we have obtained Eg05154966 meV. © 1997 American Institute of Physics.
dc.format
application/pdf
dc.publisher
American Institute of Physics
dc.relation
Reproducció del document publicat a: http://dx.doi.org/10.1063/1.365253
dc.relation
Journal of Applied Physics, 1997, vol. 81, num. 10, p. 6916-6920
dc.relation
http://dx.doi.org/10.1063/1.365253
dc.rights
(c) American Institute of Physics, 1997
dc.rights
info:eu-repo/semantics/openAccess
dc.source
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
dc.subject
Microscòpia electrònica
dc.subject
Pel·lícules fines
dc.subject
Electron microscopy
dc.title
Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy
dc.type
info:eu-repo/semantics/article
dc.type
info:eu-repo/semantics/publishedVersion
