dc.contributor.author
Georgakilas, Alexander
dc.contributor.author
Christou, Aris
dc.contributor.author
Zekentes, Konstantinos
dc.contributor.author
Mercy, J. M.
dc.contributor.author
Konczewic, L. K.
dc.contributor.author
Vilà i Arbonès, Anna Maria
dc.contributor.author
Cornet i Calveras, Albert
dc.date.issued
2012-05-02T06:59:05Z
dc.date.issued
2012-05-02T06:59:05Z
dc.date.issued
1994-07-01
dc.identifier
https://hdl.handle.net/2445/24723
dc.description.abstract
Electrical transport in a modulation doped heterostructure of In0.53Ga0.47As/In0.52Al0.48As grown on Si by molecular beam epitaxy has been measured. Quantum Hall effect and Subnikov¿De Haas oscillations were observed indicating the two¿dimensional character of electron transport. A mobility of 20¿000 cm2/V¿s was measured at 6 K for an electron sheet concentration of 1.7×1012 cm¿2. Transmission electron microscopy observations indicated a significant surface roughness and high defect density of the InGaAs/InAlAs layers to be present due to the growth on silicon. In addition, fine¿scale composition modulation present in the In0.53Ga0.47As/In0.52Al0.48As may further limit transport properties.
dc.format
application/pdf
dc.publisher
American Institute of Physics
dc.relation
Reproducció del document publicat a: http://dx.doi.org/10.1063/1.357652
dc.relation
Journal of Applied Physics, 1994, vol. 76, num. 3, p. 1948-1950
dc.relation
http://dx.doi.org/10.1063/1.357652
dc.rights
(c) American Institute of Physics, 1994
dc.rights
info:eu-repo/semantics/openAccess
dc.source
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
dc.subject
Camps magnètics
dc.subject
Nanotecnologia
dc.subject
Magnetic fields
dc.subject
Nanotechnology
dc.title
Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon
dc.type
info:eu-repo/semantics/article
dc.type
info:eu-repo/semantics/publishedVersion
