2025-05-19T10:48:28Z
2025-05-19T10:48:28Z
2024-10-11
2025-05-19T10:48:28Z
MicroLEDs, particularly when integrated with CMOS microelectronics, represent a significant advancement in nitride technology. While large-area, high-power LEDs for solid-state lighting have seen extensive optimization, microLEDs present unique fabrication and characterization challenges. Utilizing standard CMOS design and foundry services for silicon driver electronics, a new hybrid interconnect technology must be developed for chip–chip or wafer–wafer integration, necessitating much higher lateral resolution than current bonding technologies. Beyond display technology, microLED integration opens avenues for groundbreaking applications such as highly efficient nanosensors, miniaturized optical neuromorphic networks, and robust chip-based microscopy. This paper explores recent advancements in nitride/CMOS hybrid modules, providing an overview of current technologies and future possibilities in this dynamic field.
Article
Published version
English
Electrònica; Circuits integrats; Díodes electroluminescents; Electronics; Integrated circuits; Light emitting diodes
American Institute of Physics (AIP)
Reproducció del document publicat a: https://doi.org/https://doi.org/10.1063/5.0223867
Applied Physics Letters, 2024, vol. 125, num.15
https://doi.org/https://doi.org/10.1063/5.0223867
cc-by-nc (c) Prades Garcia, Juan Daniel et al., 2024
http://creativecommons.org/licenses/by-nc/3.0/es/