Automated Scanning Dielectric Microscopy Toolbox for Operando Nanoscale Electrical Characterization of Electrolyte‐Gated Organic Transistors

dc.contributor.author
Tanwar, Shubham
dc.contributor.author
Millán Solsona, Rubén
dc.contributor.author
Ruiz‐Molina, Sara
dc.contributor.author
Mas Torrent, Marta
dc.contributor.author
Kyndiah, Adrica
dc.contributor.author
Gomila Lluch, Gabriel
dc.date.issued
2025-05-05T17:10:41Z
dc.date.issued
2025-05-05T17:10:41Z
dc.date.issued
2024-11-01
dc.date.issued
2025-05-05T17:10:41Z
dc.identifier
2199-160X
dc.identifier
https://hdl.handle.net/2445/220828
dc.identifier
754215
dc.description.abstract
Electrolyte-gated organic transistors (EGOTs) leveraging organic semiconductors' electronic and ionic transport characteristics are the key enablers for many biosensing and bioelectronic applications that can selectively sense, record, and monitor different biological and biochemical processes at the nanoscale and translate them into macroscopic electrical signals. Understanding such transduction mechanisms requires multiscale characterization tools to comprehensively probe local electrical properties and link them with device behavior across various bias points. Here, an automated scanning dielectric microscopy toolbox is demonstrated that performs operando in-liquid scanning dielectric microscopy measurements on functional EGOTs and carries out extensive data analysis to unravel the evolution of local electrical properties in minute detail. This paper emphasizes critical experimental considerations permitting standardized, accurate, and reproducible data acquisition. The developed approach is validated with EGOTs based on blends of organic small molecule semiconductor and insulating polymer that work as accumulation-mode field-effect transistors. Furthermore, the degradation of local electrical characteristics at high gate voltages is probed, which is apparently driven by the destruction of local crystalline order due to undesirable electrochemical swelling of the organic semiconducting material near the source electrode edge. The developed approach paves the way for systematic probing of EGOT-based technologies for targeted optimization and fundamental understanding.
dc.format
1 p.
dc.format
application/pdf
dc.language
eng
dc.publisher
Wiley-VCH
dc.relation
Versió postprint del document publicat a: https://doi.org/https://doi.org/10.1002/aelm.202400222
dc.relation
Advanced Electronic Materials, 2024, vol. 10, num.11
dc.relation
https://doi.org/https://doi.org/10.1002/aelm.202400222
dc.rights
(c) Wiley-VCH, 2024
dc.rights
info:eu-repo/semantics/openAccess
dc.source
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
dc.subject
Electroquímica
dc.subject
Semiconductors orgànics
dc.subject
Electròlits
dc.subject
Electrochemistry
dc.subject
Organic semiconductors
dc.subject
Electrolytes
dc.title
Automated Scanning Dielectric Microscopy Toolbox for Operando Nanoscale Electrical Characterization of Electrolyte‐Gated Organic Transistors
dc.type
info:eu-repo/semantics/article
dc.type
info:eu-repo/semantics/acceptedVersion


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