Universitat Politècnica de Catalunya. Departament d'Enginyeria Civil i Ambiental
2016-04
Deformation twins grow by the motion of disconnections along their interfaces, thereby coupling shear with migration. Atomic-scale simulations of this mechanism have advanced to the point where the trajectory of each atom can be followed as it transits from a site in the shrinking grain, through the interface, and onwards to a site in the growing twin. Historically, such trajectories have been factorised into shear and shuffle components according to some defined convention. In the present article, we introduce a method of factorisation consistent with disconnection motion. This procedure is illustrated for the case of {10-12} < 10-1-1> twinning in hcp materials, and shown to agree with simulated atomic trajectories for Zr.
Peer Reviewed
Postprint (published version)
Article
English
Àrees temàtiques de la UPC::Enginyeria dels materials; Twinning (Crystallography); Twin growth; Disconnections; Atomic-scale simulation; Shear and shuffle displacements; Dislocacions en cristalls
Taylor & Francis Ltd.
http://www.tandfonline.com/doi/full/10.1080/21663831.2016.1165298?src=recsys
http://creativecommons.org/licenses/by/3.0/es/
Open Access
E-prints [73026]