Estudio, diseño e implementación de un sistema de monitorización de condiciones para módulos MOSFET de SiC

Abstract

This Final Degree Project focuses on the design and validation of a condition monitoring system for Silicon Carbide (SiC) MOSFET modules, aiming to supervise the device's status during operation in power electronics applications. Due to their characteristics, these devices are commonly used in industrial sectors where they are exposed to extreme conditions that can degrade them. In order to control the lifespan of these elements, this work studies the technologies, their main characteristics, and their failures. Therefore, the main degradation mechanisms to which SiC MOSFET modules are exposed are studied, as well as the effect of aging on these devices. Consequently, the key parameters for condition monitoring of SiC devices and monitoring circuits are analyzed. On the other hand, architectures are analyzed to identify the main electrical and thermal variables of these devices. Finally, techniques to condition the signals and send them properly to digital devices for subsequent analysis are investigated and analyzed. For this purpose, a system based on signal conditioning circuits is designed to adapt and filter the measured magnitudes to the input range of an ADC converter. Due to the complexity involved in designing and developing a monitoring system, a simulation environment has been chosen to implement the proposed system, using the LTspice tool, which allows the integration of SiC models and electronic devices provided by their manufacturers. In this environment, the SiC MOSFET module is modeled, and the most important monitoring circuits are designed and implemented to measure the conditions of the SiC power devices.