dc.contributor
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor
Universitat Politècnica de Catalunya. Doctorat en Enginyeria Electrònica
dc.contributor
Universitat Politècnica de Catalunya. Departament d'Enginyeria Química
dc.contributor
Universitat Politècnica de Catalunya. MNT-Solar - Grup de Micro i Nano Tecnologies per Energia Solar
dc.contributor
Universitat Politècnica de Catalunya. IMEM-BRT- Innovation in Materials and Molecular Engineering - Biomaterials for Regenerative Therapies
dc.contributor.author
Jiménez Guerra, Maykel
dc.contributor.author
Caño Prades, Ivan
dc.contributor.author
Jiménez Arguijo, Alex
dc.contributor.author
Navarro Güell, Alejandro
dc.contributor.author
Gon Medaille, Axel
dc.contributor.author
Calvo Barrio, Lorenzo
dc.contributor.author
Armelín Diggroc, Elaine Aparecida
dc.contributor.author
Madhani Mohammed Sadhakathullah, Ahammed Hussain
dc.contributor.author
Placidi, Marcel Jose
dc.contributor.author
Sánchez González, Yudania
dc.contributor.author
Puigdollers i González, Joaquim
dc.contributor.author
Saucedo Silva, Edgardo Ademar
dc.identifier
Jimenez, M. [et al.]. Synergistic effects of high-pressure processing and interface engineering in Sb2Se3/CdS photovoltaic devices. «Solar energy», Setembre 2025, vol. 298, núm. article 113670.
dc.identifier
https://hdl.handle.net/2117/442402
dc.identifier
10.1016/j.solener.2025.113670
dc.description.abstract
We report an innovative high-pressure post-deposition annealing for co-evaporated Sb2Se3 absorber layers, demonstrating for its effectiveness for enhancing the crystallographic texture along the [00 l] direction. This process promotes growth parallel to the c-axis, favoring carrier transport and yielding highly crystalline films with crystallite sizes exceeding 100 nm. Nonetheless, despite improved structural properties, photovoltaic performance remained limited by interface quality. To address this, we implemented UV-O3 and KCN etching treatments, which significantly enhanced the Sb2Se3/CdS interface, leading to conversion efficiencies up to 5.8 %. XPS, UPS, and contact angle measurements confirmed that these treatments selectively modify the interface without altering bulk properties. Thus, this work highlights high-pressure treatments combined with targetes interface engineering as a promising strategy for optimizing Sb2Se3-based thin-film solar cells.
dc.description.abstract
Peer Reviewed
dc.description.abstract
Postprint (published version)
dc.format
application/pdf
dc.relation
https://www.sciencedirect.com/science/article/pii/S0038092X25004335
dc.rights
http://creativecommons.org/licenses/by/4.0/
dc.rights
Attribution 4.0 International
dc.subject
Àrees temàtiques de la UPC::Enginyeria química
dc.subject
Àrees temàtiques de la UPC::Energies
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Antimony selenide
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Surface treatment
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Interface engineering
dc.subject
High-Pressure processing
dc.title
Synergistic effects of high-pressure processing and interface engineering in Sb2Se3/CdS photovoltaic devices
