Analysis of the conductance transient in thick film tin oxide gas sensors

Other authors

Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica

Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies

Publication date

1996-03

Abstract

In this paper, we analyse the conductance transient of a Taguchi TGS-822 sensor under a step change in the vapour concentration. A diffusion-limited range in the conductance transient is observed. Adjustments between the theoretical calculations based on a non-linear diffusion-reaction model and the experimental results alloy a constant, t', to be estimated, which is independent of the final conductance value and depends, among other parameters, on the effective diffusion coefficients of vapours in the porous tin oxide sensor. From transient measurements of organic solvents (benzene and o-xylene) we have obtained t' values that are independent of concentration and characteristic for each vapour. This new parameter can give useful information for gas/vapour recognition.


Peer Reviewed


Postprint (published version)

Document Type

Article

Language

English

Publisher

Elsevier

Related items

https://www.sciencedirect.com/science/article/pii/0925400596800633

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Restricted access - publisher's policy

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E-prints [72987]