Universitat Politècnica de Catalunya
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
2010
This paper introduce a design review of a wideband Power Amplifier with a 65nm CMOS technology. The Integrated Circuit has to work from 300MHz to 2:5GHz with external components adapted to a specific band. A 2.5D simulation of the QFN24 is lead to evaluate the parasitic effects generated by the package. The one and two tones analysis are performed to characterize the PA. The 1dB Compression Point reach 10:36dBm and the Output referred Third order Interception Point is 23:98dBm. The Power Added Efficiency reached at the 1dB Compression Point is around 11:5% including the effect of the external components and the post-layout parasitics of the Integrated Circuit.
Peer Reviewed
Postprint (published version)
Conference report
English
Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics; Amplifiers (Electronics) -- Design and construction; Amplificadors (Electrònica) -- Disseny i construcció
Restricted access - publisher's policy
E-prints [73018]
