Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy

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dc.contributor.author	Roura Grabulosa, Pere
dc.contributor.author	López-de Miguel, Manel
dc.contributor.author	Cornet i Calveras, Albert
dc.contributor.author	Morante i Lleonart, Joan R.
dc.date	1997-05
dc.date.accessioned	2010-11-07T06:17:18Z
dc.date.available	2010-11-07T06:17:18Z
dc.date.issued	2010-11-07T06:17:18Z
dc.identifier.citation	Roura, P., López-de Miguel, M., Cornet, A., i Morante, J. R. (1997). Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy. Journal of Applied Physics, 81 (10), 6916 - 6920. Recuperat 28 setembre 2010, a http://jap.aip.org/resource/1/japiau/v81/i10/p6916_s1
dc.identifier.citation	0021-8979
dc.identifier.uri	http://hdl.handle.net/10256/3048
dc.format	application/pdf
dc.language.iso	eng
dc.publisher	American Institute of Physics
dc.relation	http://dx.doi.org/10.1063/1.365253
dc.relation	© Journal of Applied Physics, 1997, vol. 81, núm. 10, p. 6916-6920
dc.relation	Articles publicats (D-F)
dc.rights	Tots els drets reservats
dc.subject	Compostos d'alumini
dc.subject	Compostos d'indi
dc.subject	Fotoluminescència
dc.subject	Semiconductors
dc.subject	Aluminum compounds
dc.subject	Indium compounds
dc.subject	Photoluminescence
dc.title	Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy
dc.type	info:eu-repo/semantics/article
dc.description.abstract	A series of InxAl1-xAs samples (0.51≪x≪0.55)coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x=0.532, at 14 K we have obtained Eg0=1549±6 meV

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