Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers

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Title:	Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers
Author:	Roura Grabulosa, Pere; Vilà Arbonés, Anna; Bosch, J.; López-de Miguel, Manel; Cornet i Calveras, Albert; Morante i Lleonart, Joan R.; Westwood, D. I.
Abstract:	The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05
Subject(s):	-Gal·li -Compostos d'indi -Espectres d'absorció -Semiconductors -Absorption spectra -Gallium -Indium compounds
Rights:	Tots els drets reservats
Document type:	Article
Published by:	American Institute of Physics
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