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Enginyeria Electrònica i Biomèdica: Envíos recientes

Mostrando ítems 341-360 de 781

    Elastic and orbital effects on thickness-dependent properties of manganite thin films 

    Infante, I. C.; Sánchez Barrera, Florencio; Fontcuberta i Griñó, Josep; Wojcik, M.; Jedryka, E.; Estradé Albiol, Sònia; Peiró Martínez, Francisca; Arbiol i Cobos, Jordi; Laukhin, Vladimir; Espinos, J. P. (Fecha de publicación: 2009-12-29)

    We report on the structural and magnetic characterization of (110) and (001) La2/3Ca1/3MnO3 (LCMO) epitaxial thin films simultaneously grown on (110) and (001)SrTiO3 substrates, with thicknesses t varying between 8 nm and ...

    Frequency resolved admittance spectroscopy measurements on In0.52Al0.48As/InxGa1¿xAs/In0.52Al0.48As single quantum well structures 

    Marsal Garví, Lluís F. (Lluís Francesc); López Villegas, José María; Bosch Estrada, José; Morante i Lleonart, Joan Ramon (Fecha de publicación: 2012-04-30)

    In this work a new admittance spectroscopy technique is proposed to determine the conduction band offset in single quantum well structures (SQW). The proposed technique is based on the study of the capacitance derivative ...

    Thermal modeling and management in ultrathin chip stack technology 

    Pinel, Stèphane; Marty, Antoine; Tasselli, Josiane; Bailbe, Jean-Pierre; Beyne, Eric; Van Hoof, Rita; Marco Colás, Santiago; Morante i Lleonart, Joan Ramon; Vendier, Olivier; Huan, Marc (Fecha de publicación: 2009-06-18)

    This paper presents a thermal modeling for power management of a new three-dimensional (3-D) thinned dies stacking process. Besides the high concentration of power dissipating sources, which is the direct consequence of ...

    Comparison of the thermal decomposition processes of several aminoalcohol-based ZnO inks with one containing ethanolamine 

    Gómez Núñez, Alberto; Roura Grabulosa, Pere; López Martínez, Ma. Concepción; Vilà i Arbonès, Anna Maria (Fecha de publicación: 2019-02-15)

    Four inks for the production of ZnO semiconducting films have been prepared with zinc acetate dihy-drate as precursor salt and one among the following aminoalcohols: aminopropanol (APr), aminomethylbutanol (AMB), aminophenol ...

    Pursuing the diffraction limit with Nano-LED scanning transmission optical microscopy 

    Moreno Martín, Sergio; Canals Gil, Joan; Moro Moreno, Víctor; Franch Masdeu, Nil; Vilà i Arbonès, Anna Maria; Romano Rodríguez, Albert; Prades García, Juan Daniel; Bezshlyakh, Daria D.; Waag, Andreas; Kluczyk Korch, Katarzyna; Auf der Maur, Matthias; Di Carlo, Aldo; Krieger, Sigurd; Geleff, Silvana; Diéguez Barrientos, Àngel (Fecha de publicación: 2021-05-11)

    Recent research into miniaturized illumination sources has prompted the development of alternative microscopy techniques. Although they are still being explored, emerging nano-light-emitting-diode (nano-LED) technologies ...

    A Point-of-Care Device for Molecular Diagnosis Based on CMOS SPAD Detectors with Integrated Microfluidics 

    Canals Gil, Joan; Franch Masdeu, Nil; Alonso Casanovas, Oscar; Vilà i Arbonès, Anna Maria; Diéguez Barrientos, Àngel (Fecha de publicación: 2021-04-08)

    We describe the integration of techniques and technologies to develop a Point-of-Care for molecular diagnosis PoC-MD, based on a fluorescence lifetime measurement. Our PoC-MD is a low-cost, simple, fast, and easy-to-use ...

    Enhancement of the sub-band-gap photoconductivity in ZnO nanowires through surface functionalization with carbon nanodots 

    Cammi, Davide; Zimmermann, Kseniia; Gorny, René; Vogt, Angelina; Dissinger, Frank; Gad, Alaaeldin; Markiewicz, Nicolai; Waag, Andreas; Prades García, Juan Daniel; Ronning, Carsten; Waldvogel, Siegfried R.; Voss, Tobias (Fecha de publicación: 2018-01-30)

    We report on the surface functionalization of ZnO nanowire (NW) arrays by attachment of carbon nanodots (C-dots) stabilized by polyethylenimine. The photoconductive properties of the ZnO NWs/C-dots devices were investigated ...

    Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon 

    Georgakilas, Alexander; Christou, Aris; Zekentes, Konstantinos; Mercy, J. M.; Konczewic, L. K.; Vilà i Arbonès, Anna Maria; Cornet i Calveras, Albert (Fecha de publicación: 2012-05-02)

    Electrical transport in a modulation doped heterostructure of In0.53Ga0.47As/In0.52Al0.48As grown on Si by molecular beam epitaxy has been measured. Quantum Hall effect and Subnikov¿De Haas oscillations were observed ...

    Fast measurements with MOX sensors: A least-squares approach to blind deconvolution 

    Martínez, Dominique; Burgués, Javier; Marco Colás, Santiago (Fecha de publicación: 2019-10-02)

    Metal oxide (MOX) sensors are widely used for chemical sensing due to their low cost, miniaturization, low power consumption and durability. Yet, getting instantaneous measurements of fluctuating gas concentration in ...

    Coronal voids and their magnetic nature 

    Nölke, J. D.; Solanki, S.K.; Hirzberger, J.; Peter, H.; Chitta, L. P.; Kahil, F.; Valori, G.; Wiegelmann, T.; Orozco Suárez, D.; Albert, K.; Albelo Jorge, N.; Appourchaux, T.; Alvarez-Herrero, A.; Blanco Rodríguez, J.; Gandorfer, A.; Germerott, D.; Guerrero, L.; Gutierrez-Marques, P.; Kolleck, M.; Del Toro Iniesta, J. C.; Volkmer, R.; Woch, J.; Fiethe, B.; Gómez Cama, José María; Pérez-Grande, I.; Sanchis Kilders, E.; Balaguer Jiménez, M.; Bellot Rubio, L.R.; Calchetti, D.; Carmona Flores, Manuel; Deutsch, W.; Feller, A.; Fernandez-Rico, G.; Fernández-Medina, A.; García Parejo, P.; Gasent Blesa, José L.; Gizon, L.; Grauf, B.; Heerlein, K.; Korpi-Lagg, A.; Lange, T.; López Jiménez, A.; Maue, Thorsten; Meller, R.; Moreno Vacas, A.; Müller, R.; Nakai, Eiji; Schmidt, Wolfgang; Schou, J.; Schühle, U.; Sinjan, J.; Staub, J.; Strecker, H.; Torralbo, I.; Berghmans, D.; Kraaikamp, E.; Rodriguez, L.; Verbeeck, C.; Zhukov, A. N.; Auchere, F.; Buchlin, E.; Parenti, S.; Janvier, M.; Barczynski, K.; Harra, L.; Schwanitz, C.; Aznar Cuadrado, R.; Mandal, S.; Teriaca, L.; Long, D.; Smith, P. (Fecha de publicación: 2024-03-08)

    Context. Extreme ultraviolet (EUV) observations of the quiet solar atmosphere reveal extended regions of weak emission compared to the ambient quiescent corona. The magnetic nature of these coronal features is not well ...

    Optical visualization of ultrathin mica flakes on semitransparent gold substrates 

    Dols-Pérez, Aurora; Sisquella, X.; Fumagalli, Laura, 1959-; Gomila Lluch, Gabriel (Fecha de publicación: 2016-04-25)

    We show that optical visualization of ultrathin mica flakes on metallic substrates is viable using semitransparent gold as substrates. This enables to easily localize mica flakes and rapidly estimate their thickness directly ...

    Polarization strategies to improve the emission of a Si-based light source emitting at 1.55 um 

    Ramírez Ramírez, Joan Manel; Jambois, Olivier; Berencén Ramírez, Yonder Antonio; Navarro Urrios, Daniel; Anopchenko, Aleksei; Marconi, Alessandro; Prtljaga, Nikola; Daldosso, Nicola; Pavesi, Lorenzo; Colonna, Jean-Philippe; Fedeli, Jean-Marc; Garrido Fernández, Blas (Fecha de publicación: 2012-10-26)

    We present a electroluminescence (EL) study of the Si-rich silicon oxide (SRSO) LEDs with and without Er3+ ions under different polarization schemes: direct current (DC) and pulsed voltage (PV). The power efficiency of the ...

    Fuzzy k-NN applied to mould detection 

    Kuske, M.; Rubio, R.; Romain, A. C.; Nicolas, J.; Marco Colás, Santiago (Fecha de publicación: 2018-10-19)

    The possibility to detect Aspergillus versicolor growing on different building materials by a metal oxide sensor array is studied. Results show that an accurate classification rate of 89 ± 3% can be obtained combining an ...

    Boron-incorporating silicon nanocrystals embedded in SiO2: absende of free carriers vs. B-induced defects 

    Hiller, Daniel; López Vidrier, Julià; Gutsch, Sebastian; Zacharias, Margit; Wahl, Michael; Bock, Wolfgang; Brodyanski, Alexander; Kopnarski, Michael; Nomoto, Keita; Valenta, Jan; König, Dirk (Fecha de publicación: 2018-11-09)

    Boron (B) doping of silicon nanocrystals requires the incorporation of a B-atom on a lattice site of the quantum dot and its ionization at room temperature. In case of successful B-doping the majority carriers (holes) ...

    Role of aluminum and HMTA in the hydrothermal synthesis of two-dimensional n-doped ZnO nanosheets 

    Murillo, Gonzalo; León-Salguero, Edgardo; Martínez-Alanis, Paulina R.; Esteve Tintó, Jaume; Alvarado-Rivera, Josefina; Güell Vilà, Frank (Fecha de publicación: 2019-10-10)

    This work reports the study of the processes behind the growth of two-dimensional (2D) n-doped ZnO nanostructures on an AlN layer. We have demonstrated that AlN undergoes a slow dissociation process due to the basic ...

    Energetics and carrier transport in doped Si/SiO2 quantum dots 

    Garcia-Castello, Nuria; Illera Robles, Sergio; Prades García, Juan Daniel; Ossicini, Stefano; Cirera Hernández, Albert; Guerra, Roberto (Fecha de publicación: 2016-11-03)

    In the present theoretical work we have considered impurities, either boron or phosphorous, located at different substitutional sites in silicon quantum dots (Si-QDs) with diameters around 1.5 nm, embedded in a SiO2 matrix. ...

    Challenges and future prospects on 3D in-vitro modeling of the neuromuscular circuit 

    Badiola Mateos, Maider; Hervera Abad, Arnau; Río Fernández, José Antonio del; Samitier i Martí, Josep (Fecha de publicación: 2019-08-26)

    Movement of skeletal-muscle fibers is generated by the coordinated action of several cells taking part within the locomotion circuit (motoneurons, sensory-neurons, Schwann cells, astrocytes, microglia, and muscle-cells). ...

    On the artificial creation of the EL2 center by means of boron implantation in gallium arsenide 

    Morante i Lleonart, Joan Ramon; Pérez Rodríguez, Alejandro; Samitier i Martí, Josep; Romano Rodríguez, Albert (Fecha de publicación: 2012-10-08)

    In the present work, an analysis of the dark and optical capacitance transients obtained from Schottky Au:GaAs barriers implanted with boron has been carried out by means of the isothermal transient spectroscopy (ITS) and ...

    Anomalous optical and electrical recovery process of photoquenched EL2 defect produced by oxygen and boron ion implantation in gallium arsenide 

    Samitier i Martí, Josep; Marco Colás, Santiago; Pérez Rodríguez, Alejandro; Morante i Lleonart, Joan Ramon; Boher, P.; Renaud, M. (Fecha de publicación: 2012-10-08)

    The optical and electrical recovery processes of the metastable state of the EL2 defect artificially created in n‐type GaAs by boron or oxygen implantation are analyzed at 80 K using optical isothermal transient spectroscopy. ...

    A current-mode interface circuit for a piezoresistive pressure sensor 

    Samitier i Martí, Josep; Puig i Vidal, Manuel; Bota Ferragut, Sebastián Antonio; Rubio, Carles; Siskos, Stilianos K.; Laopoulos, Theordore (Fecha de publicación: 2009-06-05)

    An interfacing circuit for piezoresistive pressure sensors based on CMOS current conveyors is presented. The main advantages of the proposed interfacing circuit include the use of a single piezoresistor, the capability of ...