Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices

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RECERCAT Home > Universitat de Barcelona > Enginyeria Electrònica i Biomèdica > Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) > View document

To access the full text documents, please follow this link: http://hdl.handle.net/2445/148184

dc.contributor	Universitat de Barcelona
dc.contributor.author	Blázquez, O. (Oriol)
dc.contributor.author	Frieiro Castro, Juan Luis
dc.contributor.author	López Vidrier, Julian
dc.contributor.author	Guillaume, Clément
dc.contributor.author	Portier, Xavier
dc.contributor.author	Labbé, C.
dc.contributor.author	Sanchis, Pablo
dc.contributor.author	Hernández Márquez, Sergi
dc.contributor.author	Garrido, Blas
dc.date	2020-01-20T11:08:12Z
dc.date	2020-01-20T11:08:12Z
dc.date	2018-10-29
dc.date	2020-01-20T11:08:12Z
dc.identifier.citation	0003-6951
dc.identifier.citation	682896
dc.identifier.uri	http://hdl.handle.net/2445/148184
dc.format	5 p.
dc.format	application/pdf
dc.language.iso	eng
dc.publisher	American Institute of Physics
dc.relation	Reproducció del document publicat a: https://doi.org/10.1063/1.5046911
dc.relation	Applied Physics Letters, 2018, vol. 113, num. 183502
dc.relation	https://doi.org/10.1063/1.5046911
dc.rights	(c) American Institute of Physics , 2018
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Òxid de zinc
dc.subject	Pel·lícules fines
dc.subject	Teoria de la commutació
dc.subject	Nanoelectrònica
dc.subject	Zinc oxide
dc.subject	Thin films
dc.subject	Switching theory
dc.subject	Nanoelectronics
dc.title	Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/publishedVersion
dc.description.abstract	The resistive switching properties of ITO/ZnO/p-Si devices have been studied, which present welldefined resistance states with more than five orders of magnitude difference in current. Both the high resistance state (HRS) and the low resistance state (LRS) were induced by either sweeping or pulsing the voltage, observing some differences in the HRS. Finally, the charge transport mechanisms dominating the pristine, HRS, and LRS states have been analyzed in depth, and the obtained structural parameters suggest a partial re-oxidation of the conductive nanofilaments and a reduction of the effective conductive area. Published by AIP Publishing. https://doi.org/10.1063/1.5046911

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