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dc.contributor | Universitat de Barcelona |
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dc.contributor.author | Ramírez, Joan Manel |
dc.contributor.author | Ferrarese Lupi, Federico |
dc.contributor.author | Jambois, Olivier |
dc.contributor.author | Berencén Ramírez, Yonder Antonio |
dc.contributor.author | Navarro Urrios, Daniel |
dc.contributor.author | Anopchenko, Aleksei |
dc.contributor.author | Marconi, Alessandro |
dc.contributor.author | Prtljaga, Nikola |
dc.contributor.author | Tengattini, Andrea |
dc.contributor.author | Pavesi, Lorenzo |
dc.contributor.author | Colonna, Jean Philippe |
dc.contributor.author | Fedeli, Jean Marc |
dc.contributor.author | Garrido Fernández, Blas |
dc.date | 2019-02-22T10:14:36Z |
dc.date | 2019-02-22T10:14:36Z |
dc.date | 2012-03-13 |
dc.date | 2019-02-22T10:14:36Z |
dc.identifier.citation | 0957-4484 |
dc.identifier.citation | 600582 |
dc.identifier.uri | http://hdl.handle.net/2445/128618 |
dc.description.abstract | The electroluminescence (EL) at 1.54 µm of metal-oxide-semiconductor (MOS) devices with Er3+ ions embedded in the silicon-rich silicon oxide (SRSO) layer has been investigated under different polarization conditions and compared with that of erbium doped SiO2 layers. EL time-resolved measurements allowed us to distinguish between two different excitation mechanisms responsible for the Er3+ emission under an alternate pulsed voltage signal (APV). Energy transfer from silicon nanoclusters (Si-ncs) to Er3+ is clearly observed at low-field APV excitation. We demonstrate that sequential electron and hole injection at the edges of the pulses creates excited states in Si-ncs which upon recombination transfer their energy to Er3+ ions. On the contrary, direct impact excitation of Er3+ by hot injected carriers starts at the Fowler-Nordheim injection threshold (above 5 MV cm−1) and dominates for high-field APV excitation. |
dc.format | 9 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | Institute of Physics (IOP) |
dc.relation | Versió postprint del document publicat a: https://doi.org/10.1088/0957-4484/23/12/125203 |
dc.relation | Nanotechnology, 2012, vol. 23, num. 12, p. 125203-125211 |
dc.relation | https://doi.org/10.1088/0957-4484/23/12/125203 |
dc.rights | (c) Institute of Physics (IOP), 2012 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Metall-òxid-semiconductors |
dc.subject | Compostos de silici |
dc.subject | Transferència d'energia |
dc.subject | Metal oxide semiconductors |
dc.subject | Silicon compounds |
dc.subject | Energy transfer |
dc.title | Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/acceptedVersion |