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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.contributor.author | Campos García, Antonio |
dc.contributor.author | Riera Galindo, Sergi |
dc.contributor.author | Puigdollers i González, Joaquim |
dc.contributor.author | Mas Torrent, Marta |
dc.date | 2018-04-19 |
dc.identifier.citation | Campos, A., Riera, S., Puigdollers, J., Mas, M. Reduction of charge traps and stability enhancement in solution-processed organic field-effect transistors based on a blended n-type semiconductor. "ACS Applied materials and interfaces", 19 Abril 2018, vol. 10, p. 15952-15961. |
dc.identifier.citation | 1944-8252 |
dc.identifier.citation | 10.1021/acsami.8b02851 |
dc.identifier.uri | http://hdl.handle.net/2117/117625 |
dc.language.iso | eng |
dc.relation | https://pubs.acs.org/doi/10.1021/acsami.8b02851 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors |
dc.subject | Transistors |
dc.subject | Density-of-states |
dc.subject | High stability |
dc.subject | N-type |
dc.subject | OFET |
dc.subject | Semiconductor-dielectric interface |
dc.subject | Transistors |
dc.title | Reduction of charge traps and stability enhancement in solution-processed organic field-effect transistors based on a blended n-type semiconductor |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.type | info:eu-repo/semantics/article |
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