Enhanced low field magnetoresistive response in (La2/3Sr1/3MnO3)x/(CeO2)1-x composite thick films prepared by screen printing

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RECERCAT Home > Universitat de Barcelona > Enginyeria Electrònica i Biomèdica > Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) > View document

To access the full text documents, please follow this link: http://hdl.handle.net/2445/118103

dc.contributor	Universitat de Barcelona
dc.contributor.author	Valencia, S.
dc.contributor.author	Castaño Linares, Óscar
dc.contributor.author	Fontcuberta i Griñó, Josep
dc.contributor.author	Martínez Perea, Benjamin
dc.contributor.author	Balcells i Argemí, Lluís
dc.date	2017-11-23T14:27:32Z
dc.date	2017-11-23T14:27:32Z
dc.date	2003-07
dc.date	2017-11-23T14:27:32Z
dc.identifier.citation	0021-8979
dc.identifier.citation	674157
dc.identifier.uri	http://hdl.handle.net/2445/118103
dc.format	5 p.
dc.format	application/pdf
dc.language.iso	eng
dc.publisher	American Institute of Physics
dc.relation	Reproducció del document publicat a: https://doi.org/10.1063/1.1589174
dc.relation	Journal of Applied Physics, 2003, vol. 94, num. 4, p. 2524-2528
dc.relation	https://doi.org/10.1063/1.1589174
dc.rights	(c) American Institute of Physics , 2003
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Magnetoresistència
dc.subject	Ceri (Element químic)
dc.subject	Precipitació (Química)
dc.subject	Serigrafia
dc.subject	Pel·lícules fines
dc.subject	Magnetoresistance
dc.subject	Cerium
dc.subject	Precipitation (Chemistry
dc.subject	Serigraphy
dc.subject	Thin films
dc.title	Enhanced low field magnetoresistive response in (La2/3Sr1/3MnO3)x/(CeO2)1-x composite thick films prepared by screen printing
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/publishedVersion
dc.description.abstract	The magnetoresistance and magnetization of (La2/3Sr1/3MnO3)x(LSMO)/(CeO2)1−x (0.64⩽x⩽1) composite thick films have been studied as a function of the manganite concentration. It is found that for high LSMO content, when the applied magnetic field is perpendicular to the film plane, the attainable low field magnetoresistance (LFMR) response is drastically reduced due to demagnetizing field effects. These effects are suppressed when the concentration of CeO2 is increased, thus an enhancement of the LFMR is observed. These results can be very important for developing magnetic sensors working in the low magnetic field regime when magnetic field needs to be applied perpendicular to the film plane.

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